so d - 1 23 plastic-encapsulate diodes bzt52 b 2v 4 -bzt52 b 43 zener diode feature z planar die construction z 350mw power dissipation on ceramic pcb z general purpose, medium current z ideally suited for automated assembly processes z available in lead free version maximum ratings ( t a =25 unless otherwise specified ) characteristic symbol value unit forward voltage (note 2) @ i f = 10ma v f 0.9 v power dissipation(note 1) p d 350 mw thermal resistance from junction to ambient r ja 357 / w junction temperature t j 150 sod-123 storage temperature range t stg - 5 5 ~ +150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,oct,2013
electrical characteristics ( ta = 25 c unless otherwise specified) zener voltage range (note 2) maximum zener impedance (note 3 ) maximum reverse current typical te m p e r a t u r e coefficent @i ztc te s t current i ztc v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r mv/c type number type code nom(v) min(v) max(v) ma ? ma a v min max ma bzt52b2v4 2wx 2.4 2.35 2.45 5 100 600 1.0 50 1.0 -3.5 0 5 bzt52b2v7 2w1 2.7 2.65 2.75 5 100 600 1.0 20 1.0 -3.5 0 5 bzt52b3v0 2w2 3.0 2.94 3.06 5 95 600 1.0 10 1.0 -3.5 0 5 bzt52b3v3 2w3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 bzt52b3v6 2w4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 bzt52b3v9 2w5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 bzt52b4v3 2w6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 0 5 bzt52b4v7 2w7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 bzt52b5v1 2w8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 bzt52b5v6 2w9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 bzt52b6v2 2wa 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 bzt52b6v8 2wb 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 bzt52b7v5 2wc 7.5 7.35 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5 bzt52b8v2 2wd 8.2 8.04 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5 bzt52b9v1 2we 9.1 8.92 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5 bzt52b10 2wf 10 9.8 10.20 5 20 150 1.0 0.2 7.0 4.5 8.0 5 bzt52b11 2wg 11 10.78 11.22 5 20 150 1.0 0.1 8.0 5.4 9.0 5 bzt52b12 2wh 12 11.76 12.24 5 25 150 1.0 0.1 8.0 6.0 10.0 5 bzt52b13 2wi 13 12.74 13.26 5 30 170 1.0 0.1 8.0 7.0 11.0 5 bzt52b15 2wj 15 14.70 15.30 5 30 200 1.0 0.1 10.5 9.2 13.0 5 bzt52b16 2wk 16 15.68 16.32 5 40 200 1.0 0.1 11.2 10.4 14.0 5 bzt52b18 2wl 18 17.64 18.36 5 45 225 1.0 0.1 12.6 12.4 16.0 5 bzt52b20 2wm 20 19.60 20.40 5 55 225 1.0 0.1 14.0 14.4 18.0 5 bzt52b22 2wn 22 21.56 22.44 5 55 250 1.0 0.1 15.4 16.4 20.0 5 bzt52b24 2wo 24 23.52 24.48 5 70 250 1.0 0.1 16.8 18.4 22.0 5 bzt52b27 2wp 27 26.46 27.54 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52B30 2wq 30 29.40 30.60 2 80 300 0.5 0.1 21.0 24.4 29.4 2 bzt52b33 2wr 33 32.34 33.66 2 80 325 0.5 0.1 23.1 27.4 33.4 2 bzt52b36 2ws 36 35.28 36.72 2 90 350 0.5 0.1 25.2 30.4 37.4 2 bzt52b39 2wt 39 38.22 39.78 2 130 350 0.5 0.1 27.3 33.4 41.2 2 bzt52b 43 2w u 43 41.16 42.84 2 13 0 35 0 0.5 0.1 2 9 . 4 3 6 .4 45.2 2 notes: 1. device mounted on ceramic pcb : 7. 6mm x 9.4mm x 0.87mm with pad areas 25mm 2 2. short duration test pulse used to minimize self-heating ef fect 3. f = 1khz 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,oct,2013
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